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| MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600E2Y-34H q IC...................................................................600A q VCES ....................................................... 1700V q Insulated Type q 1-elements in a pack (for brake) APPLICATION DC choppers, Dynamic braking choppers. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 570.25 570.25 4 - M8 NUTS E1 E1 20 C2 G1 E1 C2 1240.25 140 30 C1 C1 E2 CM C1 E2 E1 G1 C1 C2 G2 E2 CIRCUIT DIAGRAM 16 3 - M4 NUTS 40 53 55.2 11.85 6 - 7 MOUNTING HOLES 5 35 11.5 14 38 31.5 28 LABEL HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 5 MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso -- -- Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V TC = 25C Pulse TC = 25C Pulse TC = 25C, IGBT part Conditions Ratings 1700 20 600 1200 600 1200 6200 -40 ~ +150 -40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W C C V N*m N*m N*m kg (Note 1) (Note 1) -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 600A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 850V, IC = 600A, VGE = 15V VCC = 850V, IC = 600A VGE1 = VGE2 = 15V RG = 3.3 Resistive load switching operation IE = 600A, VGE = 0V IE = 600A die / dt = -1200A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Per 1/2 module) IF = 600A, Clamp diode part IF = 600A dif / dt = -1200A / s, Clamp diode part Junction to case, Clamp diode part Case to fin, conductive grease applied (Per 1/2 module) Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 5.5 -- 2.75 3.30 70 10.0 3.8 3.3 -- -- -- -- 2.40 -- 100 -- -- 0.016 2.50 -- 100 -- 0.016 Max 12 6.5 0.5 3.58 -- -- -- -- -- 1.20 1.50 2.00 0.60 3.12 2.00 -- 0.020 0.064 -- 3.25 2.00 -- 0.064 -- Unit mA V A V nF nF nF C s s s s V s C K/W K/W K/W V s C K/W K/W (Note 4) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1200 Tj = 25C VGE = 14V 1000 VGE = 15V VGE = 20V 800 VGE = 12V VGE = 11V VGE = 13V VGE = 10V TRANSFER CHARACTERISTICS (TYPICAL) 1200 VCE = 10V COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 1000 800 600 400 200 0 Tj = 25C Tj = 125C 600 400 200 0 VGE = 9V VGE = 8V VGE = 7V 0 2 4 6 8 10 0 4 8 12 16 20 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 VGE = 15V 10 Tj = 25C IC = 1200A 4 8 3 6 IC = 600A 2 4 1 Tj = 25C Tj = 125C 2 IC = 240A 0 0 200 400 600 800 1000 1200 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) EMITTER CURRENT IE (A) 104 7 5 3 2 Tj = 25C 103 7 VGE = 0V, Tj = 25C 5 Cies, Coes : f = 100kHz 3 Cres : f = 1MHz 2 102 7 5 3 2 Cies 102 7 5 3 2 101 101 7 5 3 2 Coes Cres 0 1 2 3 4 5 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2000 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 5 REVERSE RECOVERY TIME trr (s) SWITCHING TIMES (s) VCC = 850V, VGE = 15V 3 RG = 3.3, Tj = 125C 2 Inductive load 100 7 5 3 2 10-1 7 5 td(off) td(on) tr tf 5 7 102 23 5 7 103 23 5 10-1 7 5 5 7 102 23 5 7 103 23 5 102 7 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) Single Pulse TC = 25C Rth(j - c) = 0.080C/W (Per 1/2 module) 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 Single Pulse TC = 25C Rth(j - c) = 0.032C/W (Per 1/2 module) 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) VGE - GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) VCC = 850V IC = 600A 16 12 8 4 0 0 1000 2000 3000 4000 5000 GATE CHARGE QG (nC) Feb. 2000 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 850V, Tj = 25C 3 Inductive load 3 2 VGE = 15V, RG = 3.3 2 trr 100 103 7 7 5 5 Irr 3 3 2 2 |
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